Search results for "Electron phonon coupling"
showing 4 items of 4 documents
ELECTRON-PHONON COUPLING IN HEAVILY DOPED SILICON
2001
The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
Electron-phonon heat transport in degenerate Si at low temperatures
2004
The thermal conductance between electrons and phonons in a solid state system becomes comparatively weak at sub‐Kelvin temperatures. In this work five batches of thin heavily doped silicon‐on‐insulator samples with the electron concentration in the range of 2.0–16 × 1019 cm–3 were studied. Below 1 K all the samples were in the dirty limit of the thermal electron‐phonon coupling, where the thermal phonon wavelength exceeds the electron mean free path. The heat flow between electrons and phonons is proportional to (T6e–T6ph), where Te (Tph) is the electron (phonon) temperature. The constant of proportionality of the heat flow strongly depends on the electron concentration and its magnitude is…
Electron–phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions
2002
Abstract Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor–superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T 5 , indicating that electron–phonon relaxation rate and electron–phonon phase breaking rate are proportional to T 3 . The electron–phonon system in the SOI film is in the “dirty limit” where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
Coulomb blockade thermometry
1996
One dimensional arrays of normal metal tunnel junctions have been found to exhibit properties which are very suitable for primary and secondary thermometry in a lithographically adjustable temperature range which extends over about two decades. The thermometer is remarkably insensitive to nonuniformities in the actual pattern and to even strong magnetic fields. We also discuss the behaviour of this device at very low temperatures where the hot electron effect due to poor electron phonon coupling ultimately takes over and at very high temperatures where the finite tunnel barrier effects appear. Short arrays, and especially single tunnel junctions show interesting deviations from the universa…